SEMICONDUCTOR DEVICE INCLUDING A MOS TRANSISTOR AND PRODUCTION METHOD THEREFOR

摘要

It is intended to provide a semiconductor device including a MOS transistor, comprising: a pillar- shaped semiconductor layer; one of drain and source regions which is formed underneath the pillar-shaped semiconductor layer to serve as a first drain/source region; a gate electrode formed around a sidewall of the pillar-shaped semiconductor layer through a first dielectric film; an epitaxial semiconductor layer formed on top of an upper surface of the pillar-shaped semiconductor layer; and a remaining one of the drain and source regions which is formed so as to be at least partially in the epitaxial semiconductor layer to serve as a second drain/source region, wherein an area of an upper surface of the second drain/source region is greater than an area of the upper surface of the pillar-shaped semiconductor layer. (Fig. 2)