| 摘要 |
PURPOSE: A semiconductor memory device is provided to rapidly perform a test operation and a repair operation by automatically scrambling input/output data according to low address. CONSTITUTION: Local line drivers(240) selectively inverse the data of a global line. A local line driving unit differentially drives the inversed data by a positive local line and a negative local line. Global line driving units(260) selectively inverse the data of the positive local line and a negative local line. A global line driving unit drives the inversed data by the global line. A first cell region equalizes the data of the cell therein and data of a positive local line. A second cell region equalizes the data of the cell therein and a negative local line. |
