| 摘要 |
<p>A memory includes a first memory cell and a second memory cell formed over the first memory cell. Each of the first memory cell and the second memory cell includes a channel region comprising silicon and carbon, a control gate, and a dielectric stack between the channel region and the control gate. A carbon content of the channel region of the second memory cell is less than a carbon content of the channel region of the first memory cell.</p> |
