| 摘要 |
PURPOSE: A microwave plasma processing apparatus is provided to improve the reliability by reducing the generation of the density variation in the thickness direction of a film. CONSTITUTION: A target is contained in a chamber(1). A loading unit is installed in the chamber. The target is loaded on the loading unit. A plasma process for the target is performed under a vacuum condition in the chamber. An upper plate(27) is arranged on the upper side of the chamber. A transmitting plate is supported by the upper plate. A plain antenna is arranged on the transmitting plate and includes a plurality of slots.
|
