发明名称 STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY
摘要 A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.
申请公布号 KR20100124350(A) 申请公布日期 2010.11.26
申请号 KR20107024608 申请日期 2001.10.10
申请人 LAM RESEARCH CORPORATION 发明人 DHINDSA RAJINDER;SRINIVASAN MUKUND;EPPLER AARON;LENZ ERIC
分类号 H01L21/3065;H01J37/32 主分类号 H01L21/3065
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