| 摘要 |
Fabrication of a power semiconductor device involves growing III-nitride transition layer (13) over a major surface of a conductive substrate by growing at least two III-nitride layers (26, 28, 30) using at least two different growth methods, and forming an active semiconductor region over the transition layer. The growth methods include molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) or metal organic chemical vapor deposition (MOCVD) methods. |
