发明名称 SUBSTRAT BON MARCHE ET PROCEDE DE FABRICATION ASSOCIE
摘要 <p>In one embodiment, the invention provides engineered substrates having a support with surface pits, an intermediate layer of amorphous material arranged on the surface of the support so as to at least partially fill the surface pits, and a top layer arranged on the intermediate layer. The invention also provides methods for manufacturing the engineered substrates which deposit an intermediate layer on a pitted surface of a support so as to at least partially fill the surface pits, then anneal the intermediate layer, then assemble a donor substrate with the annealed intermediate layer to form an intermediate structure, and finally reduce the thickness of the donor substrate portion of the intermediate structure in order to form the engineered substrate.</p>
申请公布号 FR2933235(B1) 申请公布日期 2010.11.26
申请号 FR20080003701 申请日期 2008.06.30
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 NGUYEN BICH YEN;MAZURE CARLOS
分类号 H01L21/302;H01L21/48 主分类号 H01L21/302
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