| 摘要 |
A high efficiency textured-surface light emitting diode comprises a flip-chipped stack of AlxInyGa1-x-yN layers, where 0≰x, y, x+y≰1. Each layer has a high crystalline quality, with a dislocation density below about 105 cm−2. The backside of the stack, exposed by removal of the original substrate, has a textured surface for improved light extraction.
|
