发明名称 CONDUCTIVE BUMP STRUCTURE FOR SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
摘要 A conductive bump structure for a semiconductor device and a method for fabricating the same are provided. A metal bump is formed on an under bump metallurgy (UBM) structure electrically connected to and formed on a connection pad of the semiconductor device, wherein the metal bump is sized smaller than the UBM structure. Subsequently, a solder bump is mounted on the UBM structure and encapsulates the metal bump, so as to increase the bonding area and simultaneously allow the solder bump to be sufficiently wetted on the UBM structure to enhance bonding stress of the solder bump.
申请公布号 US2010297842(A1) 申请公布日期 2010.11.25
申请号 US20100851971 申请日期 2010.08.06
申请人 SILICONWARE PRECISION INDUSTRIES CO., LTD. 发明人 KE CHUN CHI;HUANG CHIEN-PING;JIUNG DON-SON;WANG YU-PO
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址