发明名称 |
METHOD FOR ANGULAR DOPING OF SOURCE AND DRAIN REGIONS FOR ODD AND EVEN NAND BLOCKS |
摘要 |
Stacked gate structures for a NAND string are created on a substrate. Source implantations are performed at a first implantation angle to areas between the stacked gate structures. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The drain implantations create lower doped regions of a first conductivity type in the substrate on drain sides of the stacked gate structures. The source implantations create higher doped regions of the first conductivity type in the substrate on source sides of the stacked gate structures.
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申请公布号 |
US2010297823(A1) |
申请公布日期 |
2010.11.25 |
申请号 |
US20100835468 |
申请日期 |
2010.07.13 |
申请人 |
HEMINK GERRIT JAN;SATO SHINJI |
发明人 |
HEMINK GERRIT JAN;SATO SHINJI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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