VERTICALLY-ORIENTED SELECTION TRANSISTOR STRUCTURE FOR CROSS-POINT MEMORY ARRAY

摘要

A vertical field-effect transistor structure is disclosed comprising a semiconductor material mesa (320) upstanding from a semiconductor base (555) that forms a conductive channel between first and second doped regions. The first doped region is electrically coupled to one or more first siliciure layers (352) on the surface of the base. The second doped region is electrically coupled to one of a plurality of second siliciure layers (351) on the upper surface of the mesa. A gate conductor (350) is provided on one or more sidewalls of the mesa. Resistive memory cells (220) may be coupled to the second siliciure layers to form a cross-point array.