发明名称 |
METHOD FOR GROWING ZINC-OXIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A method which has a low-temperature growth step of growing a buffer layer of a ZnO-based single crystal on the substrate at a growth temperature in the range of 250° C. to 450° C. using a polar oxygen material and a metalorganic compound containing no oxygen; performing a heat treatment of the buffer layer to effect a transition of the buffer layer to a thermostable-state single crystal layer; and a high-temperature growth step of growing the ZnO-based single crystal layer on the thermostable-state single crystal layer at a growth temperature in the range of 600° C. to 900° C. using a polar oxygen material and a metalorganic compound containing no oxygen.
|
申请公布号 |
US2010295040(A1) |
申请公布日期 |
2010.11.25 |
申请号 |
US20100784732 |
申请日期 |
2010.05.21 |
申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
HORIO NAOCHIKA;MAKISHIMA MASAYUKI |
分类号 |
H01L33/28;H01L21/36;H01L29/22 |
主分类号 |
H01L33/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|