发明名称 SEMICONDUCTOR SUBSTRATE AND METHODS FOR THE PRODUCTION THEREOF
摘要 The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.
申请公布号 US2010295066(A1) 申请公布日期 2010.11.25
申请号 US20060063382 申请日期 2006.08.10
申请人 发明人 DRABE CHRISTIAN;WOLTER ALEXANDER;STEADMAN ROGER;BERGMANN ANDREAS;VOGTMEIER GEREON;DORSCHEID RALF
分类号 H01L23/48;H01L21/70;H01L21/768;H01L31/02;H01L33/00 主分类号 H01L23/48
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