发明名称 ALLOYED SEMICONDUCTOR QUANTUM DOT AND CONCENTRATION-GRADIENT ALLOYED QUANTUM DOT, SERIES INCLUDING THE SAME, AND METHODS RELATED THERETO
摘要 PROBLEM TO BE SOLVED: To provide improved quantum dots, series related to the quantum dots, methods of producing either of them and methods of using either of them. SOLUTION: This invention provides: the alloyed semiconductor quantum dot including an alloy of at least two semiconductors (the quantum dot has a homogeneous composition and is characterized by band gap energy that is non-linearly related to the molar ratio of the at least two semiconductors); a series of the alloyed semiconductor quantum dots related thereto; a concentration-gradient quantum dot including an alloy of a first semiconductor and a second semiconductor (the concentration of the first semiconductor gradually increases from the core of the quantum dot to the surface of the quantum dot and the concentration of the second semiconductor gradually decreases from the core of the quantum dot to the surface of the quantum dot); a series of concentration-gradient quantum dots related thereto; in vitro and in vivo methods of use; and the methods of producing the alloyed semiconductor quantum dots and concentration-gradient quantum dots and the series of quantum dots related thereto. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010267989(A) 申请公布日期 2010.11.25
申请号 JP20100161981 申请日期 2010.07.16
申请人 INDIANA UNIV RESEARCH & TECHNOLOGY CORP 发明人 NIE SHUMING;BAILEY ROBERT E
分类号 H01L29/06;C12N15/09;C12Q1/68;H01L;H01L29/221 主分类号 H01L29/06
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