| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is excellent in reliability because of no dependency on variations in resistive value between an electrode part and a through electrode layer. SOLUTION: An electrode part 18 containing an external connection terminal is formed in a first insulating film 8 of a semiconductor substrate surface 2a. A via hole 10 penetrates the substrate. A through electrode layer 11 is formed in a via hole sidewall 10a and a second insulating film 12 of a substrate rear surface as well as the first insulating film at a via hole bottom surface. A silicide layer 9 is formed for connection between the electrode part and the through electrode layer. In a cross section provided by cutting through a plane containing a via hole central axis, a width A of silicide layer≤width B of via hole bottom part. COPYRIGHT: (C)2011,JPO&INPIT
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