| 摘要 |
PROBLEM TO BE SOLVED: To provide a design method for a semiconductor integrated circuit in consideration of irregularity of transistor characteristics due to a small number of discrete charges. SOLUTION: The method comprises a step of determining a probability density function P1(x) of displacement x of transistor characteristics generated by application of a single charge, and a step of determining a design margin M to be taken into consideration in circuit design based on the P1(x) and appearance probability of the number n of charges to be applied. Thereby, irregularity is calculated accurately in such a semiconductor integrated circuit having a minute transistor that a single charge influences its characteristics. COPYRIGHT: (C)2011,JPO&INPIT
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