发明名称 |
Method of Fabricating Photoelectronic Device of Group III Nitride Semiconductor and Structure Thereof |
摘要 |
A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.
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申请公布号 |
US2010295084(A1) |
申请公布日期 |
2010.11.25 |
申请号 |
US20100852746 |
申请日期 |
2010.08.09 |
申请人 |
ADVANCED OPTOELECTRONIC TECHNOLOGY INC. |
发明人 |
TU PO MIN;HUANG SHIH CHENG;LIN WEN YU;HSU CHIH PENG;CHAN SHIH HSIUNG |
分类号 |
H01L33/10;H01L33/00;H01L33/30;H01L33/32 |
主分类号 |
H01L33/10 |
代理机构 |
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地址 |
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