| 发明名称 |
SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can have transistors having different gate lengths formed. <P>SOLUTION: The method of manufacturing the semiconductor device includes the processes of: forming a first columnar body and a second columnar body on a semiconductor substrate; forming a semiconductor film covering the first and second columnar bodies and the semiconductor substrate, a first portion covering the first columnar body and a second portion covering the second columnar body being different in at least one of conductivity type and impurity concentration; and etching back the semiconductor film to form a first semiconductor columnar portion and a second semiconductor columnar portion having different heights on respective side walls of the first and second columnar bodies. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2010267814(A) |
申请公布日期 |
2010.11.25 |
| 申请号 |
JP20090117951 |
申请日期 |
2009.05.14 |
| 申请人 |
ELPIDA MEMORY INC |
发明人 |
NISHI HIROO;KAKEHASHI EIICHIRO |
| 分类号 |
H01L27/092;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L29/41;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L27/092 |
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