| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can significantly expand margin of photoengraving process, suppress "poor opening" by reducing "micro-loading effect", facilitate to secure process tolerance of "short circuit", and reduce contact resistance. SOLUTION: A gate electrode layer 50 and an insulation film 2 containing nitrogen are laminated so as to extend slopewise against an active region. A silicon oxide film 5 is formed. A beltlike opening pattern that is larger than the width of the active region and smaller than the pitch of adjoining active regions is formed on the insulation film 2. Each of a pair of impurity diffusion regions is exposed from the opening pattern. The opening pattern is embedded by a conductive layer 23. Plug conductive layers 23a and 23b are formed that are electrically connected from the conductive layer 23 to each of the pair of the impurity diffusion regions, and each upper face of the plug conductive layers 23a and 23b is made to be the same plane as the upper face of the insulation film 2. COPYRIGHT: (C)2011,JPO&INPIT
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