| 摘要 |
PROBLEM TO BE SOLVED: To realize low on-characteristics, low Vf characteristics and low recovery losses for IGBT. SOLUTION: In the semiconductor device, a dose amount D<SB>F</SB>of p-type impurities of a p-type layer located directly under and brought into contact with an upper electrode 10, a dose amount D<SB>B</SB>of p-type impurities of a p-type layer brought into contact with a lower electrode 11, and a lifetime control amount are adjusted so that the electron lifetime τn, p-type carrier dose amount D<SB>F</SB>under surface contact and rear surface p-type carrier dose amount D<SB>B</SB>can satisfy the relations: D<SB>F</SB><1×10<SP>16</SP>×τn<SP>-5</SP>, and D<SB>B</SB><4×10<SP>14</SP>×τn<SP>-1.5</SP>. As a result, it is possible to achieve low on-characteristics, low Vf characteristics and low recovery losses of IGBT. COPYRIGHT: (C)2011,JPO&INPIT |
