METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING A LANTHANUM-FAMILY-BASED OXIDE LAYER

摘要

Methods for fabricating a semiconductor device having a lanthanum-family- based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified to form a lanthanum-family-based halide portion. The lanthanum-family-based halide portion is removed with a water vapor treatment.