发明名称 NANOFLAT RESISTOR
摘要 <p>A nanoflat resistor includes a first aluminum electrode (360), a second aluminum electrode (370); and nanoporous alumina (365) separating the first and second aluminum electrodes (360, 370). A substantially planar resistor layer (330) overlies the first and second aluminum electrodes (360, 370) and nanoporous alumina (365). Electrical current passes from the first aluminum electrode (360), through a portion of the planar resistor layer (350) overlying the nanoporous alumina (365) and into the second aluminum electrode (370). A method for constructing a nanoflat resistor (390) is also provided.</p>
申请公布号 WO2010134910(A1) 申请公布日期 2010.11.25
申请号 WO2009US44570 申请日期 2009.05.19
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;FARTASH, ARJANG;MARDILOVICH, PETER 发明人 FARTASH, ARJANG;MARDILOVICH, PETER
分类号 H01G9/058;H01G9/042 主分类号 H01G9/058
代理机构 代理人
主权项
地址