<p>A nanoflat resistor includes a first aluminum electrode (360), a second aluminum electrode (370); and nanoporous alumina (365) separating the first and second aluminum electrodes (360, 370). A substantially planar resistor layer (330) overlies the first and second aluminum electrodes (360, 370) and nanoporous alumina (365). Electrical current passes from the first aluminum electrode (360), through a portion of the planar resistor layer (350) overlying the nanoporous alumina (365) and into the second aluminum electrode (370). A method for constructing a nanoflat resistor (390) is also provided.</p>
申请公布号
WO2010134910(A1)
申请公布日期
2010.11.25
申请号
WO2009US44570
申请日期
2009.05.19
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;FARTASH, ARJANG;MARDILOVICH, PETER