| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method in which a second pattern is formed in a portion of a first resist pattern where a pattern has not been formed yet, double patterning by which a pitch between patterns is halved is performed, and a substrate can be processed by a one-time dry etching, and to provide a resist material. <P>SOLUTION: The pattern forming method includes a process for forming a first resist film on a substrate, with a first positive resist material containing a high molecular compound that has copolymerized a repeating unit having lactone as an adhesion group and a repeating unit containing an acid-labile group; a process for forming a first resist pattern by exposing the first resist film, and heat-treating and developing it; a process for forming a second resist film, by applying an amine compound or an oxazoline compound to the first resist pattern, and applying a second positive resist material that contains C3-C8 alcohol or C3-C8 alcohol and C6-C12 ether, whose solvent is the solvent that does not dissolve the first resist pattern; and a process for forming a second resist pattern, by developing the second resist film after its exposure and PEB. <P>COPYRIGHT: (C)2011,JPO&INPIT |
