发明名称 |
ATMOSPHERIC PRESSURE PLASMA TREATMENT APPARATUS, ATMOSPHERIC PRESSURE PLASMA TREATMENT METHOD, AND ELECTRODE SYSTEM FOR ATMOSPHERIC PRESSURE PLASMA TREATMENT APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an organic thin film transistor device exhibiting high carrier mobility and to provide a method for manufacturing the same, and to provide an organic thin film transistor device suitable for serial production under no vacuum, for example, manufacturing via a so-called roll-to-roll process and capable of providing mass production at low cost, and to provide a method for manufacturing the same. <P>SOLUTION: The atmospheric pressure plasma treatment apparatus includes: a means of exciting a discharge gas to generate an excited discharge gas; and a means of contacting a reaction gas with the excited discharge gas to convert the reaction gas into plasma, wherein the reaction gas converted into the plasma is contacted with the surface of a base material, and surface treatment for the base material is performed. The apparatus is characterized in that the reaction gas is contacted with the excited discharge gas so as to be inserted into the excited discharge gas. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2010265548(A) |
申请公布日期 |
2010.11.25 |
申请号 |
JP20100126609 |
申请日期 |
2010.06.02 |
申请人 |
KONICA MINOLTA HOLDINGS INC |
发明人 |
HIRAI KATSURA;KITA HIROSHI;ARITA HIROAKI |
分类号 |
C23C16/50;C23C4/10;C23C4/18;C23C16/30;C23C16/455;H01L21/31;H01L21/316;H01L21/336;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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