| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method suitable for producing a low-oxygen silicon single crystal without needing so much efforts to control the oxygen concentration. <P>SOLUTION: The method includes: providing a melt in a crucible; imposing, on the melt, a horizontal magnetic field having a magnetic induction B at a field center C; directing a gas between the silicon single crystal and a heat shield toward a melt free surface; and controlling the gas to flow over a region of the melt free surface which extends in a direction substantially perpendicular to the magnetic induction B. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
