| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory cell exhibiting superior switching characteristics and having a small cell size. <P>SOLUTION: The semiconductor memory cell includes a memory element consisting of an MFSFET 21 which has a gate insulating film composed of a ferroelectric film 4, and a selective switching element consisting of an MISFET 22 which has a gate insulating film composed of a paraelectric film 9, wherein the ferroelectric film 4 and the paraelectric film 9 are laminated with an amorphous semiconductor film 5 interposed therebetween. The first gate electrode 3 of the MFSFET 21 is formed on the side of the ferroelectric film 4, and the second gate electrode 10 of the MISFET is formed on the side of the paraelectric film 9. The amorphous semiconductor film 5 constitutes the common channel layer of the MFSFET 21 and MISFET 22, and a source electrode 6 and a drain electrode 8 common to the MFSFET 21 and MISFET 22 are formed on the main surface of the amorphous semiconductor film 5. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
