| 摘要 |
PROBLEM TO BE SOLVED: To form an insulating film with extremely low concentration of impurities, such as carbon, hydrogen, nitrogen, chlorine, in the film, at a low temperature. SOLUTION: This manufacturing method of a semiconductor device includes steps of: forming a specific element-containing layer on a substrate by supplying material gas containing a specific element into a processing container in which the substrate is accommodated; changing the specific element-containing layer into a nitride layer, by activating and supplying gas containing nitrogen into the processing container; forming the specific element-containing layer on the nitride layer, by supplying the material gas into the processing container; changing the specific element-containing layer on the nitride layer and the nitride layer into an oxide layer or an oxynitride layer, by activating and supplying gas containing oxygen into the processing container; and, with the above steps set as one cycle, forming an oxide film or an oxynitride film of predetermined thickness on the substrate, by repeating the cycle for a plurality of times. COPYRIGHT: (C)2011,JPO&INPIT
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