发明名称 METHODS AND SYSTEMS FOR FABRICATION OF MEMS CMOS DEVICES
摘要 A MEMS integrated circuit including a plurality of layers where a portion includes one or more electronic elements on a semiconductor material substrate. The circuit includes a structure of interconnection layers having a bottom layer of conductor material and a top layer of conductor material where the layers are separated by at least one layer of dielectric material. The bottom layer may be formed above and in contact with an Inter Dielectric Layer. The circuit also includes a hollow space within the structure of interconnection layers and a MEMS device in communication with the structure of interconnection layers.
申请公布号 US2010295138(A1) 申请公布日期 2010.11.25
申请号 US20100784024 申请日期 2010.05.20
申请人 BAOLAB MICROSYSTEMS SL 发明人 MONTANYA SILVESTRE JOSEP;VALLE FRAGA JUAN JOSE;LLAMAS MOROTE MARCO ANTONIO;SABIR TAYYIB
分类号 H01L29/84;H01L21/306 主分类号 H01L29/84
代理机构 代理人
主权项
地址