| 摘要 |
A method for producing gallium arsenide nanowhiskers, in which hydrogen chloride is used as a transporting gas, and the sealed quartz ampoule is used as a deposition chamber, which ampoule is loaded with gallium arsenide in the solid state and located on the substrate with preliminary deposited gold strips on it with the thickness of (0.010.05) µm, vacuumized to pressure in the ampoule of (0.91.1) Pa, filled with hydrogen chloride to the pressure of (34)·10Pa, the ampoule is placed in the three-zone electric resistance furnace with the heating of gallium arsenide source to a temperature of T = (700 ± 20) °C and the crystallization zone with the substrate to a temperature of T = (670 ± 10) °C, the ampoule in this mode is hold for 15-16 minutes, after which the crystallization zone with the substrate is cooled to a temperature of T = (610 ± 10) °C, in this mode ampoule is hold for 1-2 hours till the growing gallium arsenide nanowhiskers of the required size. |
