发明名称 |
Halbleiterwafer-Unterteilungsverfahren unter Verwendung eines Laserstrahls |
摘要 |
<p>A method which can divide a semiconductor wafer sufficiently precisely along a street by use of a laser beam, while fully avoiding or suppressing contamination of circuits formed in rectangular regions on the face of the semiconductor water, and without causing chipping to the rectangular regions on the face. A laser beam is applied from beside one of the back and the face of a semiconductor substrate and focused onto the other of the back and the face of the semiconductor substrate, or the vicinity thereof, to partially deteriorate at least a zone ranging from the other of the back and the face of the semiconductor substrate to a predetermined depth.</p> |
申请公布号 |
DE102004029093(B4) |
申请公布日期 |
2010.11.25 |
申请号 |
DE20041029093 |
申请日期 |
2004.06.16 |
申请人 |
DISCO CORP. |
发明人 |
NAGAI, YUSUKE;KOBAYASHI, SATOSHI |
分类号 |
H01L21/78;B23K26/08;B23K26/40;H01L21/301 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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