| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage device allowing replacement of a nonvolatile memory without interrupting access from a host, and to provide a method for controlling the same, and an electronic device using the same. <P>SOLUTION: The storage device includes: a data writing part 32 writing data received from the host 28 into a main SLC (Single Level Cell) 12a; a decision part 40 deciding whether or not an erasure frequency of the main SLC 12a reaches a prescribed frequency related to a writable frequency; and a data transfer part 34 transferring data of an LBA not performed with writing access from the host for a prescribed time or above of data written in the main SLC 12a to an MLC (Multi Level Cell) 10 having writing speed slower than the main SLC 12a. After it is decided that the erasure frequency of the main SLC 12a reaches the prescribed frequency, the data writing part 32 writes data received from the host into a spare SLC 12b having writing speed faster than the MLC. <P>COPYRIGHT: (C)2011,JPO&INPIT |
