发明名称 |
Compositions comprising sulfonamide material and processes for photolithography |
摘要 |
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
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申请公布号 |
US2010297550(A1) |
申请公布日期 |
2010.11.25 |
申请号 |
US20090592159 |
申请日期 |
2009.11.19 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS LLC |
发明人 |
WANG DEYAN;WU CHUNYI;BARCLAY GEORGE G.;XU CHENG-BAI |
分类号 |
G03F7/20;G03B27/52;G03F7/004 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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