METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To improve productivity of film forming processing by suppressing oxidization of a metal film that becomes a background of a high dielectric constant insulating film. SOLUTION: A method for manufacturing a semiconductor device includes the steps of: forming a first high dielectric constant insulating film on a substrate by alternately repeating the step of supplying raw materials into a processing chamber in which the substrate is accommodated, and exhausting air and the step of supplying a first oxidization source into the processing chamber and exhausting air; and forming a second high dielectric constant insulating film on the first high dielectric constant insulating film by alternately repeating the step of supplying raw materials into the processing chamber and exhausting air and the step of supplying a second oxidization source, which is different from the first oxidization source, into the processing chamber and exhausting air. COPYRIGHT: (C)2011,JPO&INPIT