| 摘要 |
PROBLEM TO BE SOLVED: To provide an etchant for collectively etching a film of Cu metal and an oxide layer of a Cu alloy, which can control a dissolution of the oxide film of the copper alloy, and realizes such conditions that the dissolution of all layers including the oxide layer of the Cu alloy proceeds with a moderate balance, particularly in a stacked film which is an object to be collectively etched, and to provide an etching method therefor. SOLUTION: The etchant is directed for etching a copper-containing stacked film on a substrate containing an oxide layer of copper or the oxide layer of the copper alloy which contacts the substrate, and includes a peroxide and an organic acid. The etching method is directed for etching the copper-containing stacked film on the substrate containing the oxide layer of copper or the oxide layer of the copper alloy which contacts the substrate, and includes a step of etching the stacked film by using the etchant including the peroxide and the organic acid. COPYRIGHT: (C)2011,JPO&INPIT |
