发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE MANUFACTURING METHOD |
摘要 |
Provided is a substrate processing apparatus, a semiconductor device manufacturing method, and a substrate manufacturing method. The substrate processing apparatus comprises: a reaction chamber configured to process substrates; a first gas supply system configured to supply at least a silicon-containing gas and a chlorine-containing gas or at least a gas containing silicon and chlorine; a first gas supply unit connected to the first gas supply system; a second gas supply system configured to supply at least a reducing gas; a second gas supply unit connected to the second gas supply system; a third gas supply system configured to supply at least a carbon-containing gas and connected to at least one of the first gas supply unit and the second gas supply unit; and a control unit configured to control the first to third gas supply systems.
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申请公布号 |
US2010297832(A1) |
申请公布日期 |
2010.11.25 |
申请号 |
US20100782090 |
申请日期 |
2010.05.18 |
申请人 |
HITACHI-KOKUSAI ELECTRIC INC. |
发明人 |
IMAI YOSHINORI;SHIBATA HIDEJI;SASAKI TAKAFUMI |
分类号 |
H01L21/205;C23C16/32;C23C16/455 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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