SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can perform precharge operation while precharging a bit line with different voltages according to data. SOLUTION: The semiconductor memory device has a plurality of memory cells 410 in which data of polarity corresponding to a direction of a current passing through a source line and the bit line are stored, and a precharge driving section 450 that responds to a precharge signal PRE before the data are stored in the plurality of memory cells and precharges the bit line with a voltage corresponding to the data. COPYRIGHT: (C)2011,JPO&INPIT