| 摘要 |
PROBLEM TO BE SOLVED: To eliminate COP over the whole region in the diameter direction and in the thickness direction of a silicon wafer obtained by slicing a silicon single crystal by subjecting the wafer to oxidative heat treatment. SOLUTION: A silicon melt 15 is stored in a crucible 13 received in a chamber 12. A seed crystal 23 is immersed in the silicon melt 15. A silicon single crystal 11 is pulled up while rotating the seed crystal 23. Then, the silicon single crystal 11 is irradiated with neutrons to dope phosphorus into the silicon single crystal 11. After pulling up the silicon single crystal 11 from the crucible 13, the silicon single crystal 11 having an interstitial oxygen concentration in the inside of 6.0×10<SP>17</SP>atoms/cm<SP>3</SP>or less, and the silicon single crystal 11 containing a COP generating region having a size of 100 nm or less and a density of 3×10<SP>6</SP>atoms/cm<SP>3</SP>, the silicon single crystal 11 is irradiated with neutrons to reduce the variation of an in-plane resistivity in the diameter direction of the silicon single crystal 11 to 5% or less. COPYRIGHT: (C)2011,JPO&INPIT
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