| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device for suppressing the deterioration of mobility due to shortage of nitrogen, and reducing leak currents due to shortage of nitrogen, and to provide a method for manufacturing the nitrogen semiconductor device. SOLUTION: A nitrogen semiconductor device 1 is provided with a substrate 10, a buffer layer 11, a nitride semiconductor layer (first nitride semiconductor layer 12, second nitride semiconductor layer 13, third nitride semiconductor layer 14), a first electrode 22, a second electrode 23, and a control electrode 25. The nitrogen semiconductor device is provided with a recess part 16, formed into a concave shape, from the surface of the third nitride semiconductor layer 14 to the second nitride semiconductor layer 13 between the first electrode 22 and the second electrode 23. The recess part 16 is provided with a nitride insulating film 17 formed of insulating nitride, and the control electrode 25 is formed of conductive nitride and is arranged so as to overlap on the nitride insulating film 17 (gate insulating film). COPYRIGHT: (C)2011,JPO&INPIT |
