发明名称 |
Transistor Layout for Manufacturing Process Control |
摘要 |
A symmetrical circuit is disclosed (FIG. 4). The circuit includes a first transistor (220) having a first channel in a substantial shape of a parallelogram (FIG. 5A) with acute angles. The first transistor has a first current path (506) oriented in a first crystal direction (520). A first control gate (362) overlies the first channel. A second transistor (222) is connected to the first transistor and has a second channel in the substantial shape of a parallelogram with acute angles. The second transistor has a second current path (502) oriented parallel to the first current path. A second control gate (360) overlies the second channel.
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申请公布号 |
US2010297815(A1) |
申请公布日期 |
2010.11.25 |
申请号 |
US20100850813 |
申请日期 |
2010.08.05 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PARIKH ASHESH;SESHADRI ANAND |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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