发明名称 Transistor Layout for Manufacturing Process Control
摘要 A symmetrical circuit is disclosed (FIG. 4). The circuit includes a first transistor (220) having a first channel in a substantial shape of a parallelogram (FIG. 5A) with acute angles. The first transistor has a first current path (506) oriented in a first crystal direction (520). A first control gate (362) overlies the first channel. A second transistor (222) is connected to the first transistor and has a second channel in the substantial shape of a parallelogram with acute angles. The second transistor has a second current path (502) oriented parallel to the first current path. A second control gate (360) overlies the second channel.
申请公布号 US2010297815(A1) 申请公布日期 2010.11.25
申请号 US20100850813 申请日期 2010.08.05
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 PARIKH ASHESH;SESHADRI ANAND
分类号 H01L21/8234 主分类号 H01L21/8234
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