ETCHING METHOD AND METHOD OF PROCESSING PHOTOMASK BLANK

摘要

PROBLEM TO BE SOLVED: To provide an etching method which can etch multilayer films continuously in the same chamber while using a hard mask technique when dry-etching a multilayer film of a hard mask layer and a processed layer having etching selectivity to the hard mask layer and to provide a method of processing a photomask blank to which applies this etching method.

SOLUTION: When a resist pattern is transferred to a hard mask layer by first dry etching using the resist pattern on a processed layer formed on a substrate and the processed layer is pattern-processed by second dry etching using a hard mask pattern transferred to the hard mask layer, second dry etching is performed by changing the density of an accessory component without changing a major component of dry etching gas in an etching device in which first dry etching is done after first dry etching.

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