| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a variable optical attenuator using a rib type silicon thin line waveguide, which achieves high speed operation with low power consumption without requiring useless power. <P>SOLUTION: On the upper surface of a core 103 of an area held between an electrode 141 and an electrode 151, a silicon oxide layer 107 formed by oxidizing the core 103 of this area is provided. For example, the silicon oxide layer 107 is formed by a well known thermal oxidization method, or a plasma oxidization method. It is enough that the thickness of the layer of the silicon oxide layer 107 is about 5 nm. When a voltage is applied, unnecessary current flow is prevented by providing the silicon oxide layer 107, and thereby, lower power consumption is achieved. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
