| 摘要 |
A device manufacturing method includes forming a first insulation film on a semiconductor substrate. A first mask is formed on the first insulation film to extend in a first direction and have a linear pattern. The first insulation film is etched using the first mask as mask to process the insulation film into a linear body. A second mask is formed on the linear body to extend in a second direction different from the first direction and have a linear pattern. The linear body is etched using the second mask as mask to process the linear body into a pillar element. A first conductive film is formed to cover the pillar body. The first conductive film is etched to form a first electrode of the first conductive film on side surfaces of the pillar body.
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