METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a nitride single crystal capable of producing the high quality nitride single crystal. SOLUTION: The method for producing the nitride single crystal comprises a step to prepare a heterogeneous substrate 1 and a step to form a nitride single crystal film 3 on the heterogeneous substrate 1. The heterogeneous substrate 1 is made of a material subliming within a temperature range of forming the nitride single crystal film 3. In the step to form the nitride single crystal film 3, the forming of the film starts from a temperature of the subliming temperature of the heterogeneous substrate 1 or lower and then the temperature of the forming of the film is raised to a higher temperature than the subliming temperature of the heterogeneous substrate 1. It is favorable that the nitride single crystal film 3 is denoted as AlxGa1-xN and the heterogeneous substrate 1 is SiC. COPYRIGHT: (C)2011,JPO&INPIT