| 摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam lithography system and a charged particle beam lithography method that suppress a variation in size due to resist heating through multiple lithography, and make a resulting increase in throughput small. SOLUTION: A temperature distribution on a sample when lithography is performed with predetermined multiplicity is predicted, and multiplicity is determined for each pattern based upon the temperature distribution. The multiplicity is determined based on an amount of irradiation with a charged particle beam needed for the lithography and position precision needed for the each pattern. Further, multiplicity of each pattern can be determined for the each pattern in a predetermined deflection area. COPYRIGHT: (C)2011,JPO&INPIT |
