SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE

摘要

Disclosed is a semiconductor device comprising a thin film transistor and a thin film diode, wherein a semiconductor layer (113) of the thin film transistor and a semiconductor layer (114) of the thin film diode are both crystalline semiconductor layers, the semiconductor layer (113) of the thin film transistor and the semiconductor layer (114) of the thin film diode respectively contain portions that are formed by crystallizing the same amorphous semiconductor film, the thickness of the semiconductor layer (114) of the thin film diode is larger than the thickness of the semiconductor layer (113) of the thin film transistor, the difference between the thickness of the semiconductor layer (113) of the thin film transistor and the thickness of the semiconductor layer (114) of the thin film diode is more than 25 nm, and the surface roughness of the semiconductor layer (114) of the thin film diode is larger than the surface roughness of the semiconductor layer (113) of the thin film transistor. As a result, the thin film transistor and the thin film diode achieve respective required characteristics.