| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a horizontal HEMT having a high avalanche breakdown strength, and to provide a manufacturing method thereof. <P>SOLUTION: The horizontal HEMT includes a substrate 10, a first layer 11 to serve as a first conduction type channel disposed on the substrate, and a second layer 12 to constitute an electron supply layer disposed at least partially on the first layer 11. The horizontal HEMT further includes a second conduction type semiconductor substance which is complementary to the first conductive type, and a third layer 13 disposed at least partially in the first layer 11. A PN diode is therefore formed between the first layer and the third layer, and the PN diode has a lower breakdown voltage than the horizontal HEMT, so that the HEMT is protected from a high electric field and prevented from being degraded. <P>COPYRIGHT: (C)2011,JPO&INPIT |
