| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solution for forming an insulating thin film that can be applied at low temperature, has high insulation and dielectric constant properties, and allows surface processing, the insulating thin film formed using the same, a field effect transistor having superior performance using the insulating thin film as a gate insulating layer and a method of manufacturing the same, and an image display device. <P>SOLUTION: The field effect transistor includes a substrate; a gate electrode formed on the substrate; a gate insulating layer comprising an insulating thin film containing a high polymer formed on the gate electrode, a metal atom having a bond with the high polymer through an oxygen atom and selected out of a group 4 element, a group 5 element, a group 6 element, a group 13 element, zinc, and tin, and an organic molecule having a bond with the metal atom through the oxygen atom or a nitrogen atom; a source electrode and a drain electrode formed on the gate insulating layer apart from each other; and a semiconductor formed between the source electrode and drain electrode. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
