发明名称 PLASMA DOPING APPARATUS AND METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A top plate, disposed on an upper portion of a vacuum container so as to face a substrate-placing area of a sample electrode, is provided with an impurity-containing film that contains an impurity, and is formed on a top plate peripheral edge portion area that is a face exposable to a plasma generated in the vacuum container, and is located on a peripheral edge of a top plate center portion area that faces the center portion of the substrate-placing area.
申请公布号 US2010297836(A1) 申请公布日期 2010.11.25
申请号 US20080808285 申请日期 2008.12.11
申请人 PANASONIC CORPORATION 发明人 SASAKI YUICHIRO;OKASHITA KATSUMI;MIZUNO BUNJI
分类号 H01L21/26;H01J37/317 主分类号 H01L21/26
代理机构 代理人
主权项
地址