发明名称 STRUCTURE FOR MAKING SOLUTION PROCESSED ELECTRONIC DEVICES
摘要 There is provided a process for forming an organic electronic device wherein a TFT substrate having a non-planar surface has deposited over that substrate a planarization layer such that a substantially planar substrate, or planarized substrate, is formed. A multiplicity of thin first electrode structures having a first thickness and having tapered edges with a taper angle of no greater than 75° are formed over the planarized substrate. A multiplicity of active layers is formed over the planarized substrate. Then a buffer layer is formed by liquid deposition of a composition comprising a buffer material in a first liquid medium. The buffer layer has a second thickness which is at least 20% greater than the first thickness. A chemical containment pattern defining pixel openings is then formed over the buffer layer. A composition comprising a first active material in a second liquid medium is deposited into at least a portion of the pixel openings. Then a second electrode is formed.
申请公布号 US2010295036(A1) 申请公布日期 2010.11.25
申请号 US20090863701 申请日期 2009.01.29
申请人 E.I. DU PONT DE NEMOURS AND COMPANY 发明人 TSAI YAW-MING A.;STAINER MATTHEW
分类号 H01L51/10;H01L51/40 主分类号 H01L51/10
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