发明名称 |
STRUCTURE FOR MAKING SOLUTION PROCESSED ELECTRONIC DEVICES |
摘要 |
There is provided a process for forming an organic electronic device wherein a TFT substrate having a non-planar surface has deposited over that substrate a planarization layer such that a substantially planar substrate, or planarized substrate, is formed. A multiplicity of thin first electrode structures having a first thickness and having tapered edges with a taper angle of no greater than 75° are formed over the planarized substrate. A multiplicity of active layers is formed over the planarized substrate. Then a buffer layer is formed by liquid deposition of a composition comprising a buffer material in a first liquid medium. The buffer layer has a second thickness which is at least 20% greater than the first thickness. A chemical containment pattern defining pixel openings is then formed over the buffer layer. A composition comprising a first active material in a second liquid medium is deposited into at least a portion of the pixel openings. Then a second electrode is formed.
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申请公布号 |
US2010295036(A1) |
申请公布日期 |
2010.11.25 |
申请号 |
US20090863701 |
申请日期 |
2009.01.29 |
申请人 |
E.I. DU PONT DE NEMOURS AND COMPANY |
发明人 |
TSAI YAW-MING A.;STAINER MATTHEW |
分类号 |
H01L51/10;H01L51/40 |
主分类号 |
H01L51/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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