发明名称 Single crystal silicon carbaide nanowire, method of preparation thereof, and filter comprising the same
摘要 Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime.
申请公布号 US2010293910(A1) 申请公布日期 2010.11.25
申请号 US20070919809 申请日期 2007.08.16
申请人 CHOI SUNG CHURL;LEE SANG-HOON;LEE JIN-SEOK;BYEUN YUN-KI 发明人 CHOI SUNG CHURL;LEE SANG-HOON;LEE JIN-SEOK;BYEUN YUN-KI
分类号 C01B31/36;B01D39/20;C30B1/10;D02G3/02 主分类号 C01B31/36
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