发明名称 |
Single crystal silicon carbaide nanowire, method of preparation thereof, and filter comprising the same |
摘要 |
Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime.
|
申请公布号 |
US2010293910(A1) |
申请公布日期 |
2010.11.25 |
申请号 |
US20070919809 |
申请日期 |
2007.08.16 |
申请人 |
CHOI SUNG CHURL;LEE SANG-HOON;LEE JIN-SEOK;BYEUN YUN-KI |
发明人 |
CHOI SUNG CHURL;LEE SANG-HOON;LEE JIN-SEOK;BYEUN YUN-KI |
分类号 |
C01B31/36;B01D39/20;C30B1/10;D02G3/02 |
主分类号 |
C01B31/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|